by İlik, S., Gencer, F.B., Solmaz, N.Ş., Çağlar, A. and Yelten, M.B.
Reference:
İlik, S., Gencer, F.B., Solmaz, N.Ş., Çağlar, A. and Yelten, M.B., "Radiation tolerance impact of trap density near the drain and source regions of a MOSFET", In Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 449, pp. 1-5, 2019.
Bibtex Entry:
@ARTICLE{İlik20191,
author={İlik, S. and Gencer, F.B. and Solmaz, N.Ş. and Çağlar, A. and Yelten, M.B.},
title={Radiation tolerance impact of trap density near the drain and source regions of a MOSFET},
journal={Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms},
year={2019},
volume={449},
pages={1-5},
doi={10.1016/j.nimb.2019.04.040},
url={https://www.scopus.com/inward/record.uri?eid=2-s2.0-85064455793&doi=10.1016%2fj.nimb.2019.04.040&partnerID=40&md5=3f1077143976ed623b5f1ca964e268a8},
language={English},
document_type={Article},
source={Scopus},
}