by Caglar, A. and Berke Yelten, M.
Reference:
Caglar, A. and Berke Yelten, M., "A high linearity LNA using 180 nm CMOS technology for S-Band", 2017 European Conference on Circuit Theory and Design, ECCTD 2017, 2017.
Bibtex Entry:
@CONFERENCE{Caglar2017,
author={Caglar, A. and Berke Yelten, M.},
title={A high linearity LNA using 180 nm CMOS technology for S-Band},
journal={2017 European Conference on Circuit Theory and Design, ECCTD 2017},
year={2017},
doi={10.1109/ECCTD.2017.8093230},
art_number={8093230},
url={https://www.scopus.com/inward/record.uri?eid=2-s2.0-85039900827&doi=10.1109%2fECCTD.2017.8093230&partnerID=40&md5=acb98d80c5a1e2b5ed1613305e726b03},
language={English},
document_type={Conference Paper},
source={Scopus},
}