by Caglar, A. and Berke Yelten, M.
Reference:
Caglar, A. and Berke Yelten, M., "A high linearity LNA using 180 nm CMOS technology for S-Band", 2017 European Conference on Circuit Theory and Design, ECCTD 2017, 2017.
Bibtex Entry:
@CONFERENCE{Caglar2017, author={Caglar, A. and Berke Yelten, M.}, title={A high linearity LNA using 180 nm CMOS technology for S-Band}, journal={2017 European Conference on Circuit Theory and Design, ECCTD 2017}, year={2017}, doi={10.1109/ECCTD.2017.8093230}, art_number={8093230}, url={https://www.scopus.com/inward/record.uri?eid=2-s2.0-85039900827&doi=10.1109%2fECCTD.2017.8093230&partnerID=40&md5=acb98d80c5a1e2b5ed1613305e726b03}, language={English}, document_type={Conference Paper}, source={Scopus}, }