by Ilik, S., Kabaoǧlu, A., Solmaz, N.Ş. and Yelten, M.B.
Reference:
Ilik, S., Kabaoǧlu, A., Solmaz, N.Ş. and Yelten, M.B., "Modeling of Total Ionizing Dose Degradation on 180-nm n-MOSFETs Using BSIM3", In IEEE Transactions on Electron Devices, vol. 66, no. 11, pp. 4617-4622, 2019.
Bibtex Entry:
@ARTICLE{Ilik20194617, author={Ilik, S. and Kabaoǧlu, A. and Solmaz, N.Ş. and Yelten, M.B.}, title={Modeling of Total Ionizing Dose Degradation on 180-nm n-MOSFETs Using BSIM3}, journal={IEEE Transactions on Electron Devices}, year={2019}, volume={66}, number={11}, pages={4617-4622}, doi={10.1109/TED.2019.2926931}, art_number={8770267}, url={https://www.scopus.com/inward/record.uri?eid=2-s2.0-85074452827&doi=10.1109%2fTED.2019.2926931&partnerID=40&md5=81f3df85ef5bd13f4acc40171a9855ef}, language={English}, document_type={Article}, source={Scopus}, }