by Rahmanudin, A., Tate, D.J., Marcial-Hernandez, R., Bull, N., Garlapati, S.K., Zamhuri, A., Khan, R.U., Faraji, S., Gollu, S.R., Persaud, K.C. and Turner, M.L.
Reference:
Rahmanudin, A., Tate, D.J., Marcial-Hernandez, R., Bull, N., Garlapati, S.K., Zamhuri, A., Khan, R.U., Faraji, S., Gollu, S.R., Persaud, K.C. and Turner, M.L., "Robust High-Capacitance Polymer Gate Dielectrics for Stable Low-Voltage Organic Field-Effect Transistor Sensors", In Advanced Electronic Materials, vol. 6, no. 3, 2020.
Bibtex Entry:
@ARTICLE{Rahmanudin2020,
author={Rahmanudin, A. and Tate, D.J. and Marcial-Hernandez, R. and Bull, N. and Garlapati, S.K. and Zamhuri, A. and Khan, R.U. and Faraji, S. and Gollu, S.R. and Persaud, K.C. and Turner, M.L.},
title={Robust High-Capacitance Polymer Gate Dielectrics for Stable Low-Voltage Organic Field-Effect Transistor Sensors},
journal={Advanced Electronic Materials},
year={2020},
volume={6},
number={3},
doi={10.1002/aelm.201901127},
art_number={1901127},
url={https://www.scopus.com/inward/record.uri?eid=2-s2.0-85078939538&doi=10.1002%2faelm.201901127&partnerID=40&md5=91d592f2d62814c2e21fe365b53f51a2},
language={English},
document_type={Article},
source={Scopus},
}